NASA looks to SiGe for radiation-immune circuits Nov 18, 2009
SiGe is naturally resistant to ionizing radiation, which comprises smaller particles, such as electrons and protons, that move at high speeds but do not deeply penetrate circuits ... So Cressler's group is designing its SiGe circuitry to withstand such errors ... The team has already begun to formulate a model of the effects of particle strikes on SiGe transistors and is using that model to simulate SiGe circuitry. (EETimes)
Scientists Bend Nanowires Into 2-D And 3-D Structures Oct 23, 2009
22, 2009) Taking nanomaterials to a new level of structural complexity, scientists have determined how to introduce kinks into arrow-straight nanowires, transforming them into zigzagging two- and three-dimensional structures with correspondingly advanced functions. The work is described this week in the journal Nature Nanotechnology by Harvard University researchers led by Bozhi Tian and Charles M. Lieber. (Science Daily)
SiGe experts push CMOS envelope for Light Peak transceivers Oct 9, 2009
Ensphere's main business has been contract design work, but it branched out into standard products last year with a line of chips that includes a 10-Gbit/s electro-optical transceiver cast in 180-nanometer silicon germanium (SiGe) BiCMOS. For its Light Peak transceiver chip, Ensphere chose to push the envelope by going with 65-nanometer CMOS.. "We were used to 10-Gbit transceivers costing $50 or more," said vice president of marketing Al Gharakhanian. (EETimes)
You needn't wait till October 22 to see Windows 7 Sep 16, 2009
Read More EE Times Blogs. Read More Trusted Sources Blogs. (EETimes)
Modeling Nano-worlds: Slashing Production Development Time And Costs For Integrated Circuits Sep 1, 2009
As the atoms in the silicon layer align with the atoms of the underlying SiGe layer, the links between the silicon atoms become stretched or strained. Moving the atoms apart reduces the atomic forces that interfere with the movement of electrons through the transistor. (Science Daily)
Engineer seeks $60 million bonus from Atmel Aug 26, 2009
Schueppen joined the Daimler-Benz research centre in Ulm, Germany, in 1993, where he worked on SiGe technology and improved in 1994 the then world record for silicon-based transistors to 160-GHz maximum frequency of oscillation. During 1995 and 1996 he transferred the SiGe technology from Daimler in Ulm to production at TEMIC Telefunken Microelectonics in Heilbronn, Germany. (EETimes)
45-nanometer Chips For Ultra-fast WiFi Aug 14, 2009
We showed that, in the long run, 45nm CMOS is the technology of choice for 60GHz radio, compared to the silicon germanium (SiGe) transistor technology that was demonstrated by IBM a few years ago. The key difference with our approach is the CMOS is the high-speed device, whereas with SiGe the high-speed device must be added to the CMOS that adds to the complexity and increases the cost, Decoutere notes. (Science Daily)
UMC Reports 2009 Second Quarter Results Jul 29, 2009
Dr. Sun continued, "UMC has executed well on its Customer-Driven Foundry Solutions approach to provide ideal solutions that meet customers' needs. The number of new products for 65/55nm has increased as anticipated, with revenue from this technology segment growing significantly from Q1 to Q2 by approximately 120%. This will help contribute to our future revenue and market share for advanced process nodes. Furthermore, numerous customers have already adopted UMC's independently developed 40nm... (PR Newswire)
SMIC Achieves Silicon Success with High Performance 45-nanometer Process Jun 30, 2009
SMIC's high-speed, high performance 45nm GP technology integrates a silicon germanium stress module into the design, allowing the device to run faster, making it ideal for a number of applications, including system-on-chip, graphics and network processors, telecommunications and wireless consumer products, and serves as a technology platform for the fast growing China market ... "Integrating the silicon germanium process and achieving a well-yielded test chip from the very first yield lot is a... (PR Newswire)
Tower Semiconductor Announces Unique Internship Program for High School Students in Israel Jun 24, 2009
Jazz's comprehensive process portfolio of modular AIMS technologies includes RFCMOS, Analog CMOS, Silicon and SiGe BiCMOS, SiGe C-BiCMOS, MEMS, Power CMOS and High Voltage CMOS. To provide world-class customer service, Tower maintains two manufacturing facilities in Israel; Jazz maintains a fab in the U.S. and additional manufacturing capacity is available in China through partnerships with ASMC and HHNEC. For more information, please visit and. Safe Harbor Regarding Forward-Looking Statements. (PR Newswire)
Terahertz SiGe imager sees through clothes Jun 16, 2009
Silicon-germanium (SiGe) chips now in lab prototype form could one day be used in millimeter-wavelength W-band devices sensitive enough to "see" through clothing to reveal concealed weapons ... "Our chip can resolve images down to a millimeter scale, enabling us to identify very small objects that are on someone's body," said professor Gabriel Rebeiz, a designer of millimeter-wave RFICs, phased arrays and microelectromechanical system (MEMS) chips, in whose UCSD lab the SiGe terahertz RFICs were... (EETimes)
DAC asks community votes on pavilion panel May 6, 2009
(05/05/2009 2:32 PM EDT). MANHASSET, NY The Design Automation Conference to be held in July will include a "Community-Driven" DAC Pavilion Panel for the first time, featuring a topic chosen by the DAC community. (EETimes)
TSMC Adopts Jordan Valley JVX 6200 for Copper Layer Metrology Apr 15, 2009
It is also used for strain engineering (SiGe, Si:C) and is used for advanced processes control (<45nm, 32nm) worldwide. Research and development are based in Migdal Ha'Emek, Israel. (PR Newswire)
IBM's 'frozen chip' claims speed record Apr 3, 2009
The experiments, conducted jointly by IBM and Georgia Tech, are part of a project to explore the ultimate speed limits of silicon germanium (SiGe) devices, which are said to operate faster at cold temperatures. Ultrahigh-frequency SiGe circuits have potential applications in commercial communications systems, military electronics, space and remote sensing. (EETimes)
Design quality enhances company survival Apr 1, 2009
Bernard Murphy Page 1 of 2 (03/27/2009 4:52 PM EDT). Most projections for 2009 show IC sales shrinking more than 10 percent. (EETimes)
Microchip, Chang headline 2009 ACE Award winners Apr 1, 2009
In winning the "Company of the Year" award, Microchip bested fellow finalists EMC Corp., Qualcomm Inc., SiGe Semiconductor and Silicon Laboratories. Winners were selected by a panel of with expertise in electronics. (EETimes)
EDAC scans the piracy scene Mar 25, 2009
(03/24/2009 10:06 AM EDT). Scott Baeder, the EDA Consortium's Anti-Piracy Committee Chair,recently delivered an update on the EDA industry's approach to piracy over the years, how the piracy scene works and current activities by the committee. (EETimes)
Pulse~Link lays off 40+, seeks investors Mar 25, 2009
The chip set consists of a CMOS baseband and separate RF and LNA devices in silicon germanium. The chip set demonstrated 500 Mbits/s TCP/IP throughput in a it co-sponsored. (EETimes)
Bluetooth Sig seeks low-power entries Mar 24, 2009
(03/23/2009 10:50 AM EDT). MANHASSET, NY The Bluetooth Special Interest Group (Sig) is launching the Bluetooth Innovation World Cup to recognize outstanding new product and application designs based on the forthcoming Bluetooth low energy wireless specification in fitness, healthcare and sports. (EETimes)
Firms gauge 'survivability' of suppliers, execs say Mar 11, 2009
Firms can't risk partnering on key technology with companies that have precarious balance sheets, according to Peter Gammel, vice president and chief technology officer at SiGe Semiconductor. "The overall health of our supply chain is incredibly important to our ability to be successful," he said. (EETimes)
Hurt by charge, Magma posts $78 million loss Feb 27, 2009
(02/26/2009 6:08 PM EST). SAN FRANCISCO Dragged down by a $60. (EETimes)
Fujitsu Laboratories Develops CMOS Transmitter IC for 40Gbps Optical Transmission Systems Feb 13, 2009
(5) Compound semiconductor: A semiconductor formed using two or more elements, such as silicon-germanium (SiGe), gallium-arsenide (GaAs), or indium-phosphide (InP). Compound semiconductors feature higher electron mobility than silicon-based semiconductors, thus enabling faster operation. (JCN Network, Japan)
Engineers push into 40G networking Feb 12, 2009
8 W. That compares to today's much larger silicon germanium transceivers that draw 10 W and require fans ... Alternative 40G parts have been made in more expensive indium phosphide, gallium arsenide or silicon germanium processes. (EETimes)
Magma cuts jobs, salaries Feb 7, 2009
(02/05/2009 6:27 PM EST). SAN FRANCISCO EDA vendor Magma Design Automation Inc. Thursday (Feb. (EETimes)
