IEDM to detail SRAM research firsts Oct 28, 2009
Meanwhile, another late paper by Penn State, Cornell and IQE Inc. researchers will describe an interband tunneling field effect transistor (TFET) built on InGaAs. It features on-current of 20 A/ m at 0. (EETimes)
45-nanometer Chips For Ultra-fast WiFi Aug 14, 2009
With that in mind, Decoutere s team carried out groundbreaking research on 45nm CMOS built using FinFETs, a type of multigate field effect transistor in which the conducting channel is wrapped around a thin silicon fin. To our knowledge, the consortium has created the first complex sub-circuits in FinFET CMOS technology, proving that it is a viable contender [to planar CMOS] for RF applications beyond 45nm, Decoutere explains. (Science Daily)
Nanotubes Weigh A Single Atom Jul 24, 2009
So we have the single electron transfer concept, which is more sensitive, and the field effect transistor concept, which is faster. Single atoms. (Science Daily)
Five enablers for future chip scaling Jun 27, 2009
Intel recently demonstrated a high-speed, low-power quantum well field effect transistor. The p-channel structure will be based on a 40-nm indium antimonide (InSb) material. (EETimes)
